FET Quiz

1. As compared to N-channel MOS switch, the P-channel MOS switch has

A. equal ON resistance
B. less ON resistance
C. more ON resistance
D. either 'a' or 'b'

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C. more ON resistance

2. P-channel MOSFET is basically a following device

A. current operated
B. voltage operated
C. power operated
D. low-frequency operated

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D. low-frequency operated

3. In a JFET, drain current is maximum when V_GS is

A. zero
B. negative
C. positive
D. equal to V_p

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A. zero

4. When a reverse bias is applied to Gate of JFET the depletion region width

A. is wider near drain and tapers near source
B. is wider near the source and tapers near drain
C. is uniform in the channel
D. is nil

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A. is wider near drain and tapers near source

5. In a MOSFET, the polarity of the inversion layer is the same as that of the

A. charge on the gate electrode
B. majority carriers in the substrate
C. majority carriers in the source
D. minority carriers in the drain

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C. majority carriers in the source

6. The channel ___________________ when I_D=I_DSS

A. is widest
B. is closed
C. is narrowest
D. does not exist

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A. is widest

7. For proper operation of an N-channel JFET the gate voltage needs to be _____ with respect to the drain.

A. positive
B. negative
C. zero
D. either 'A' or 'B'

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B. negative

8. The p-channel JFET used in Digital technology as

A. amplifier
B. rectifier
C. invertor
D. switch

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D. switch

9. After V_DS reaches pinch-off value V_p in a JFET, drain current I_D becomes

A. zero
B. low
C. reversed
D. saturated

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D. saturated

10. For a JFET, when V_GS is increased beyond the pinch-off voltage, the drain current

A. increases
B. decreases
C. remains constant
D. first decreases and then increases

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C. remains constant

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Field Effect Transistor (FET) Quiz

1. In N-channel JFET the I_D is controlled by

A. I_D
B. V_DS
C. V_GS
D. I_G

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C. V_GS

2. A field-effect transistor (FET) operates on ___________.

A. Negatively charged ions only
B. Positively charged ions only
C. Minority carriers only
D. Majority carriers only

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D. Majority carriers only

3. In common source configuration the input resistance of a JFET will be approximately

A. 10¹⁵Ohm
B. 500 Ohm
C. 100 Kilo-ohm
D. 3 Mega Ohm

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D. 3 Mega Ohm

4. A source follower (using an FET) usually has a voltage gain which is

A. >+100
B. slightly less than unity, but positive
C. exactly unity, but negative
D. about -10

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B. slightly less than unity, but positive

5. The N-channel EMOSFET has high input _____________.

A. Resistance and Capacitance
B. Inductance and Resistance
C. Current Intake
D. Capacitance and Inductance

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D. Capacitance and Inductance

6. A FET consists of a

A. source
B. drain
C. gate
D. all of the above

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D. all of the above

7. For FET, the level of V_GS that results in I_D = 0 mA is defined by V_GS = ____________ .

A. V_GS(off)
B. V_P
C. V_DS
D. none of the above

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B. V_P

8. What is the range of an FET's input impedance ?

A. 1 kilo ohms to 10 kilo ohms
B. 100 ohms to 1000 ohms
C. 50 kilo ohms to 100 kilo ohms
D. 1 Mega ohms to several hundred Mega ohms

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D. 1 Mega ohms to several hundred Mega ohms

9. The JFET is always operated with gate-source p-n junction ________________.

A. no bias
B. forward-biased
C. reverse-biased
D. grounded

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C. reverse-biased

10. FETs have similar properties to

A. PNP transistors
B. NPN transistors
C. uni-junction transistors
D. Scotty diodes

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B. NPN transistors

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